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IR IGBT
商品型号 商品编号 20071221115727
生 产 商 品牌商标
商品属性 推荐等级
上架时间 2007/12/21 11:57:00 过期时间
库存数量 1000 优惠折扣 10
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商品价格 市场价:¥0

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商品简介

IR introduces the WARP2 series of 600V benchmark devices (20A, 35A and 50A) in Non Punch Through (NPT) IGBT family, targeted towards high frequency SMPS applications. None of the competitors have the devices with such a small tail current。

商品说明

 

WARP2™ series of Thin Wafer IGBTs for High Frequency SMPS Applications

IR introduces the WARP2 series of 600V benchmark devices (20A, 35A and 50A) in Non Punch Through (NPT) IGBT family, targeted towards high frequency SMPS applications. None of the competitors have the devices with such a small tail current, and a low turn off energy Eoff, that enables the WARP2 IGBTs to operate up to 150KHz, the range currently dominated by Power Mosfets. All WARP2 IGBTs are offered with co-pack HEXFRED diodes, which offer excellent reverse recovery characteristics, much better than the integral diodes in a Power MOSFET.

This 85um thin-wafer technology device uses a lightly doped collector that reduces the stored charge, lowering the turn-off energy loss and virtually eliminating the tail current, allowing these devices to be operated at higher frequencies. The improvement in switching performance, combined with the positive thermal coefficient characteristics and the lower Gate turn-on charge Qg, allows these devices to operate efficiently up to 150KHz, while offering excellent current sharing properties when operated in parallel, like power Mosfets. Unlike Power MOSFETs, the conduction losses of these IGBTs remain essentially flat.

These features make the WARP2 IGBTs the best competitive choice of device, in both PFC and ZVS applications, where price is as important as performance. With the introduction of the WARP2 IGBTs that can offer similar performance and efficiency as a power Mosfet, but at lower system cost, IR has proven once again that they are the market leaders in high frequency, high efficiency power semiconductor devices.

WARP2 IGBTs offer the desirable features of the lowest Turn-on Gate Charge and lower conduction losses (characteristic of a conductivity modulated device) and low turn-off losses due to minimal tail currents. These combined with the fast turn-on characteristic (like Mosfet) and the superior co-pak diode characteristics make the WARP2 IGBT devices the best choice of power switching devices, in SMPS applications in medium and large power SMPS designs for Telecom and Computer applications, where cost is as important as efficiency.

FEATURES AT A GLANCE

NPT technology, positive temperature coefficient
Lower VCE(SAT)
Lower parasistic capacitances
Minimal tail current
HEXFRED ultra-fast soft recovery Co-Pack diode
Tighter distribution of parameters
Higher reliability

THE IR ADVANTAGE

Parallel operation for higher current applications
Lower conduction losses and switching losses
Higher switching frequency up to 150kHz

APPLICATIONS

Telecom and server SMPS
PFC and ZVS SMPS circuits
Uninterruptible power supplies
Consumer electronics power supplies

SPECIFICATIONS

WARP2 IGBT
Part Number
Package VCES IC at 25°C VCE(on) typ. Co-Pack Diode Qg
IRGP50B60PD1
TO-247
600V
50A
2.0V@33A
15A
205nC
IRGP35B60PD
TO-247
600V
35A
1.85V@22A
15A
160nC
IRGP20B60PD
TO-247
600V
20A
2.05V@13A
8A
68nC
IRGB20B60PD1
TO-220
600V
20A
2.05V@13A
4A
68nC

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